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Product Details:. Reflection Digital RD Supekar Electronics Pdf Download In this review, we are going to talk about RDsupekar.pdfRD Supekar Electronics Pdf Download. · · · 1. Field of the Invention The present invention relates to a particle beam irradiation apparatus and a method of manufacturing a semiconductor device, and more particularly, to a particle beam irradiation apparatus that includes a multi-electrode type scanning type electrostatic deflector and a method of manufacturing a semiconductor device. 2. Description of the Related Art Generally, in a manufacturing process of a semiconductor device (or a semiconductor integrated circuit (IC)), a gate oxide layer of a semiconductor device such as a metal oxide semiconductor field effect transistor (MOSFET) is locally replaced by irradiation of a high-energy ion with an ion beam. It is known that the quality of products is increased by abrasion of the gate oxide layer of the semiconductor device due to irradiation of the high-energy ion with the ion beam. In a conventional ion beam irradiation apparatus for performing abrasion of a gate oxide layer, the ion beam is irradiated on the gate oxide layer of a semiconductor device as an object. In this case, if the gate oxide layer of the semiconductor device is locally replaced, it is difficult to control the beam position of the ion beam, and the ion beam is irradiated not only on the gate oxide layer but also on a region in which the gate oxide layer is not locally replaced so that a portion of the semiconductor device is damaged. In order to control the ion beam so as to irradiate the ion beam on a target region (a region to be replaced) without damaging a region in which the gate oxide layer is not locally replaced, it is necessary to perform auxiliary abrasion of the gate oxide layer not at the target region but at a region in which the gate oxide layer is not locally replaced. Also, there are needs for improving a resolution of a beam spot and for increasing a beam acceleration voltage.1. Field of the Invention The present invention relates to an inner rotor type, multi-phase stepping motor to




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